The Government of Odisha, through its Electronics & Information Technology Department and nodal agency OCAC, has approved financial support for Phase 1 of RIR Power Electronics’ Silicon Carbide (SiC) semiconductor manufacturing facility in Bhubaneswar.
The two-phase project, with a total estimated investment of approximately ₹618 crore, had previously received clearance from the State Cabinet and the State-Level Single Window Clearance Committee (SLSWCC). As per the fiscal support agreement, capital subsidies will be disbursed on a pro-rata basis.
So far, RIR Power Electronics has incurred ₹65 crore in capital expenditure, making it eligible for a subsidy of ₹32 crore under the scheme. The upcoming facility is designed to manufacture high-power SiC MOSFETs, IGBTs, and diodes in the 3.3 kV to 20 kV range, catering to applications in electric vehicles, renewable energy systems, power grids, power electronics, and industrial automation.
This strategic investment aligns with Odisha’s push to position itself as a hub for advanced electronics and semiconductor manufacturing.
News by Rahul Yelligetti.