RIR to Establish India's First Silicon Carbide Powerhouse in Odisha

RIR Power Electronics is set to establish India's first Silicon Carbide (SiC) semiconductor production facility in Odisha, with phase 1 production, focusing on the manufacturing of Epitaxy Wafers, slated to begin by December 2025.

This strategic investment of Rs 618 crore will enable the production of high-power SiC devices, marking a significant milestone in advancing India’s semiconductor industry and reinforcing domestic manufacturing under the Make in India initiative. The facility will manufacture high-power MOSFETs and diodes ranging from 3.3KV to 20KV.

The cutting-edge SiC semiconductor facility will cater to critical sectors such as electric vehicles, renewable energy systems, power electronics, and industrial automation. SiC technology, known for its superior efficiency and durability, promises to revolutionize power applications by enhancing energy efficiency and operational performance across a wide range of industries.

News by Rahul Yelligetti.